The IPB80N06S2-07 is a discrete OptiMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency switching applications, offering very low on-state resistance (RDS(on)) and high current carrying capability. It is suitable for various power electronics systems, including synchronous rectification, DC-DC converters, and motor control applications.

Applications

• Synchronous Rectification
• DC-DC Converters
• Switched-Mode Power Supplies (SMPS)
• Motor Control
• Battery Management Systems

Features

• Very low RDS(on)
• High current capability
• Avalanche rated
• Logic level input
• 100% avalanche tested
• Lead-Free

Benefits

• Improved efficiency in power conversion due to reduced conduction losses.
• Enhanced system reliability with the avalanche rating.
• Simplified gate drive design due to logic level input.
• Reduced power dissipation in switching applications.
• Compliance with environmental regulations.

Additional Details

The IPB80N06S2-07 features a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of 80A. The very low RDS(on) of 7 mΩ (typical) minimizes conduction losses, leading to improved efficiency in power conversion. The avalanche rating ensures that the device can withstand voltage spikes and transient conditions, enhancing system reliability. The logic level input allows for direct driving from microcontrollers and other logic devices, simplifying gate drive design.