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IPB80N06S209ATMA1

Part No IPB80N06S209ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO263-3  /  N-Channel 55 V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2360 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPB80N06S209ATMA1TR,IPB80N06S2-09,IPB80N06S2-09-ND,2156-IPB80N06S209ATMA1,INFINFIPB80N06S209ATMA1,SP000218741
Standard Package 1,000
Win Source Part Number 959245-IPB80N06S209ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB80N06S209ATMA1 CAD Model

Description

The IPB80N06S209ATMA1 is a single N-Channel MOSFET in a TO-263-3, D²Pak package.

  • Series: OptiMOS™
  • Application: Power distribution switches and load drivers
  • Maximum Output Current: 80A
  • Voltage Load Range: 55V
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
  • Packaging: Tape and reel
  • Standard Package: 1,000 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.5703 $59.4139
31+ $3.7503 $116.2593
48+ $3.6325 $174.3600
66+ $3.5158 $232.0428
85+ $3.3992 $288.9320
114+ $3.0469 $347.3466
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69,539 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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