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IPB80N06S2L-09

Part No IPB80N06S2L-09
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186079-IPB80N06S2L-09
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S2L-09 CAD Model

Description

The Infineon IPB80N06S2L-09 is a high-performance N-Channel MOSFET that is designed for use in a variety of applications.

  • Drain-Source Voltage: 60V
  • Continuous Drain Current: 80A
  • Package: TO-263-3
  • Maximum Power Dissipation: 120W
  • On-Resistance: 6.5mOhm @ 80A and 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 3900pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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Shipping Information

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