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Same model may have multiple batches, images only for reference.
IPB80N06S2L05ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N06S2L05ATMA1

Part No IPB80N06S2L05ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO263-3
Datasheet
IPB80N06S2L05ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045826-IPB80N06S2L05ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB80N06S2L05ATMA1 CAD Model

Description

The Infineon Technologies IPB80N06S2L05ATMA1 is a MOSFET transistor with N-channel polarity and a drain-source breakdown voltage of 55V.

  • Manufacturer: Infineon Technologies
  • Channel Polarity: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Power Dissipation: 300W (Tc)
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 230nC @ 10V
  • Maximum Rds On: 4.5 mOhm @ 80A, 10V
  • Case/Package: PG-TO263-3-2
  • Mounting: SMD (SMT) technology
  • Applications: Power supplies, motor control, and DC-DC converters
  • Supply and Demand Status: Sufficient

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