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Same model may have multiple batches, images only for reference.
IPB80N06S3L-06 Real Image
Same model may have multiple batches, images only for reference.

IPB80N06S3L-06

Part No IPB80N06S3L-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-263
Datasheet
IPB80N06S3L-06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 80μA
Max Gate Charge 196nC @ 10V
Max Input Capacitance 9417pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045831-IPB80N06S3L-06
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S3L-06 CAD Model

Description

The Infineon Technologies IPB80N06S3L-06 is an N-channel MOSFET-based integrated circuit designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Packaging: Reel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Polarity: N-channel
  • Maximum Rds On @ Id, Vgs: 5.6 mOhm @ 56A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 196nC @ 10V
  • Maximum Input Capacitance: 9417pF @ 25V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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46+ $2.5204 $115.9384
71+ $2.4416 $173.3536
98+ $2.3628 $231.5544
127+ $2.2841 $290.0807
170+ $2.0478 $348.1260
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