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Same model may have multiple batches, images only for reference.
IPB80P03P405ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB80P03P405ATMA1

Part No IPB80P03P405ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 80A TO263-3
Datasheet
IPB80P03P405ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 253μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 10300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 137W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045833-IPB80P03P405ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80P03P405ATMA1 CAD Model

Description

The Infineon Technologies IPB80P03P405ATMA1 is a P-channel MOSFET that comes in a PG-TO263-3-2 package.

  • Maximum Power Dissipation: 137W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 253μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 4.7 mOhm @ 80A, 10V
  • Product Status: active
  • Popularity: medium

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