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Same model may have multiple batches, images only for reference.
BCV29H6327XTSA1
Same model may have multiple batches, images only for reference.

BCV29H6327XTSA1

Part No BCV29H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANSISTOR AF SOT89-4
Datasheet
BCV29H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 1V @ 100μA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 1022749-BCV29H6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCV29H6327XTSA1 CAD Model

Description

The BCV29H6327XTSA1 is a high-frequency transistor manufactured by Infineon Technologies.

  • Package: SOT-89-3
  • Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 1W
  • Supply and Demand Status: Sufficient

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