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Same model may have multiple batches, images only for reference.
SIHP25N60EFL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP25N60EFL-GE3

Part No SIHP25N60EFL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP25N60EFL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 146mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2274 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP25
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277759-SIHP25N60EFL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP25N60EFL-GE3 CAD Model

Description

The Vishay SIHP25N60EFL-GE3 is an N-channel MOSFET transistor with a drain-to-source voltage of 600 V and a continuous drain current of 25A @ 25°C.

  • Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Power Dissipation: 250W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
  • Package: TO-220-3 package
  • RoHS compliant: Yes

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