The IPD03N03LB is a OptiMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for a wide range of applications requiring efficient power switching.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• Motor control applications
• Load switching

Features

• Low on-resistance (Rds(on))
• Logic level driving
• Avalanche rated
• 100% Avalanche tested
• Superior thermal resistance
• N-channel, normal level

Benefits

• Increased system efficiency due to low Rds(on)
• Direct logic drive improves design flexibility
• Robustness for demanding applications
• Reduced power dissipation and improved thermal management

Additional Details

The IPD03N03LB has a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 75A (depending on the cooling conditions). Its low gate charge (Qg) ensures fast switching speeds and minimizes switching losses. The device is available in a PG-TO252-3 package. The Rds(on) is typically 3.1 mOhm at Vgs=10V. This MOSFET is particularly well-suited for high-frequency switching applications where efficiency is paramount. It is RoHS compliant and halogen-free. Its thermal resistance junction to case is very low which makes it suitable for high power application where heatsinking is employed. The device can withstand high avalanche energy. The device is suitable for harsh automotive environments.