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IPD053N08N3G Infineon Technologies IPD053N08N3G Real Image
Same model may have multiple batches, images only for reference.
IPD053N08N3G Infineon Technologies IPD053N08N3G Real Image
IPD053N08N3G Infineon Technologies IPD053N08N3G Real Image
Same model may have multiple batches, images only for reference.

IPD053N08N3G

Part No IPD053N08N3G
Manufacturer Infineon Technologies
Catalog Electronic Wholesale
Description OptiMOS3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Reference Date Code 09+Rohs
Reference case TO-252
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 753693-IPD053N08N3G
Family Name IPD053N08N3
Introduction Date January 25, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD053N08N3G CAD Model

Description

The IPD053N08N3G is a high-performance N-channel MOSFET manufactured by Infineon Technologies.

  • Popularity: commonly used part with high popularity in the market.
  • Compliance: RoHS compliant and halogen-free, indicating that it is environmentally friendly.
  • Temperature Range: -55°C to 175°C
  • Suitable for: a wide range of applications.
  • Maximum Power Dissipation: 140W
  • Package Type: TO-252
  • Alternative Parts: STD110N8F6 and IPD053N08N3 GXT.
  • Widely used: in power management applications.

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Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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