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Same model may have multiple batches, images only for reference.
IPD06N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPD06N03LB G

Part No IPD06N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-252
Datasheet
IPD06N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2800pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 104036-IPD06N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD06N03LB G CAD Model

Description

The Infineon Technologies 104036-IPD06N03LB G is a MOSFET designed for use in power management applications.

  • Status: obsolete (EOL)
  • Power Dissipation: 83W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: surface-mount technology (SMT)
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Rds On: 6.1 mOhm @ 50A, 10V
  • Supply and demand status: balanced

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