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Same model may have multiple batches, images only for reference.
IPD105N03LGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD105N03LGATMA1

Part No IPD105N03LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A TO252-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 1500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 116235-IPD105N03LGATMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian IPD105N03LGATMA1 CAD Model

Description

The Infineon Technologies IPD105N03LGATMA1 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A @ 25°C
  • Maximum Rds On @ Id,Vgs: 10.5 mOhm @ 30A, 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 14nC @ 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced
  • Package Contains: 2,500 units

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23+ $5.0531 $116.2213
36+ $4.8949 $176.2164
49+ $4.7367 $232.0983
64+ $4.5796 $293.0944
85+ $4.1049 $348.9165
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Availability: 2,650 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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