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Same model may have multiple batches, images only for reference.
IPD105N04LGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD105N04LGBTMA1

Part No IPD105N04LGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 40A TO252-3
Datasheet
IPD105N04LGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 14μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1900pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1000851-IPD105N04LGBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD105N04LGBTMA1 CAD Model

Description

The Infineon Technologies IPD105N04LGBTMA1 is an N-channel MOSFET with a breakdown voltage of 40V and a continuous drain current of 40A (Tc).

  • Breakdown Voltage: 40V
  • Continuous Drain Current: 40A (Tc)
  • Maximum Power Dissipation: 42W (Tc)
  • Package: PG-TO252-3
  • Gate-Source Threshold Voltage: 2V @ 14μA
  • Maximum Rds On: 10.5 mOhm @ 40A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient

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