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Same model may have multiple batches, images only for reference.
IPD14N06S2-80 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD14N06S2-80

Part No IPD14N06S2-80
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPD14N06 - 55V-60V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series *
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 293 pF @ 25 V
Power Dissipation (Max) 47W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603425-IPD14N06S2-80
Ultra Librarian 3D Model Ultra Librarian IPD14N06S2-80 CAD Model

Description

The IPD14N06S2-80 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 17A @ 25°C
  • Maximum On-Resistance (Rds On): 80mOhm @ 7A and 10V
  • Mounting Type: Surface Mountable
  • Package: TO-252-3, DPak
  • Gate Charge (Qg): 10nC @ 10V
  • Input Capacitance (Ciss): 293pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies
  • Product Status: active
  • Maximum Vgs: ±20V

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