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IXFP12N50P

Part No IXFP12N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO220AB / N-Channel 500 V 12A (Tc) 200W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP12
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFP12N50P
Standard Package 50
Win Source Part Number 1028157-IXFP12N50P
Ultra Librarian 3D Model Ultra Librarian IXFP12N50P CAD Model

Description

The IXFP12N50P is an N-channel MOSFET transistor from IXYS.

  • Manufacturer: IXYS
  • Product Name: IXFP12N50P
  • Type: N-channel MOSFET transistor
  • Series: HiPerFET™ and Polar
  • Drain to Source Voltage: 500V
  • Continuous Drain Current @ 25°C: 12A
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate-Threshold Voltage: 5.5V @ 1mA
  • Maximum Power Dissipation @ Tc: 200W
  • Maximum Rds On @ 6A and 10V: 500mOhm
  • Gate Charge (Qg) @ 10V: 29 nC
  • Package: TO-220-3
  • Mounting Type: Through-hole
  • Input Capacitance (Ciss) @ 25V: 1830 pF
  • Operating Temperature Range: -55°C to 150°C
  • Application: Discrete Semiconductor Products, specifically in Transistors - FETs, MOSFETs - Single category.

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