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Same model may have multiple batches, images only for reference.
IRL1404SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL1404SPBF

Part No IRL1404SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A D2PAK
Datasheet
IRL1404SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 140nC @ 5V
Max Input Capacitance 6600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205454-IRL1404SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRL1404S
Introduction Date April 30, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRL1404SPBF CAD Model

Description

The Infineon Technologies MOSFET IRL1404SPBF is a high-performance surface-mount device designed for use in various applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 160A (Tc)
  • Power Dissipation: 3.8W (Ta), 200W (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 140nC @ 5V
  • Maximum Rds On at Id,Vgs: 4 mOhm @ 95A, 10V
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 115ns
  • Maximum Input Capacitance: 6600pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK

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