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MRF6P9220HR3

Part No MRF6P9220HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ NI-860C3 / Trans RF MOSFET N-CH 68V 5-Pin NI-860C3 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 20dB
Voltage - Test 28V
Current - Test 1.6A
Power - Output 47W
Voltage Rating DC 68V
Package NI-860C3
Manufacturer Package NI-860C3
Win Source Part Number 789440-MRF6P9220HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6P9220H
Introduction Date July 02, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6P9220HR3 CAD Model

Description

Product Overview: MRF6P9220HR3

The MRF6P9220HR3 is a high-performance Radio Frequency (RF) power transistor designed and manufactured by NXP Semiconductors, a renowned leader in the field of advanced semiconductor solutions. This product is part of NXP's MRF6 series of RF power transistors, which are widely used in commercial, aerospace, and military applications due to their reliability and efficiency.

Key Features

  • Frequency Range: The MRF6P9220HR3 operates at a frequency range suitable for various RF applications, ensuring versatility across multiple platforms.
  • Power Output: This device is capable of delivering high power output, which is essential for applications that require significant signal amplification.
  • High Gain: The transistor provides high gain, which improves the signal strength and quality, making it ideal for communication systems.
  • Efficiency: With its advanced design, the MRF6P9220HR3 offers excellent efficiency, reducing power losses and heat generation.
  • Durability: Built to withstand harsh conditions, this RF power transistor is suitable for use in environments that experience extreme temperatures and vibrations.

Applications

The MRF6P9220HR3 is suitable for a wide array of applications, including but not limited to:

  • Broadcast transmitters
  • Cellular base station amplifiers
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense communication systems

Technical Specifications

Parameter Value
Technology LDMOS
Operating Voltage 28V
Power Gain Typically > 18 dB
Efficiency Typically > 30%
Thermal Resistance Low

With its robust construction and advanced features, the MRF6P9220HR3 from NXP Semiconductors stands out as a superior choice for designers looking for a reliable RF power solution. Its combination of power, efficiency, and versatility makes it an invaluable component in the RF industry.

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