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Same model may have multiple batches, images only for reference.
IPD200N15N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD200N15N3GATMA1

Part No IPD200N15N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 50A TO252-3
Datasheet
IPD200N15N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1820pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001849-IPD200N15N3GATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD200N15N3GATMA1 CAD Model

Description

The Infineon Technologies IPD200N15N3GATMA1 is a high-performance N-channel MOSFET ideal for use in a variety of applications such as power supplies, motor control, and lighting systems.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On: 20 mOhm @ Id,Vgs of 50A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Package: PG-TO252-3
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 150W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand: Currently limited

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Quantity Unit Price Ext. Price
40+ $1.2872 $51.4880
95+ $1.0562 $100.3390
150+ $1.0232 $153.4800
205+ $0.9902 $202.9910
265+ $0.9572 $253.6580
350+ $0.8582 $300.3700
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