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Same model may have multiple batches, images only for reference.
IPD220N06L3GBTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD220N06L3GBTMA1

Part No IPD220N06L3GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO252-3
Datasheet
IPD220N06L3GBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 11μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 1600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 121698-IPD220N06L3GBTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD220N06L3GBTMA1 CAD Model

Description

The Infineon Technologies IPD220N06L3GBTMA1 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current: 30A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 11μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 30A, 10V
  • Technology: MOSFET
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 36W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case / Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Active
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Limited

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500+ $0.2323 $116.1500
775+ $0.2250 $174.3750
1,065+ $0.2178 $231.9570
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1,840+ $0.1887 $347.2080
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