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SIHFR430ATR-GE3

Name: SIHFR430ATR-GE3
Brand: Vishay
SKU: 1277915
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHFR430ATR-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHFR430ATR-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Power Dissipation (Max)	110W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	SIHFR430
Other Names	742-SIHFR430ATR-GE3TR
Standard Package	2,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277915-SIHFR430ATR-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHFR430ATR-GE3 CAD Model

Alternative Products

Description

The SIHFR430ATR-GE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix with a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Drain to Source Voltage (Vdss): 500 V
Continuous Drain Current: 5A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250μA
Maximum Gate Charge: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Maximum Power Dissipation: 110W (Tc)
Operating Temperature Range: -55°C ~ 150°C (TJ)
Ideal for: Use in Transistors - FETs, MOSFETs - Single applications.

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