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IPD250N06N3G

Part No IPD250N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS(TM)3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186117-IPD250N06N3G
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD250N06N3G CAD Model

Description

The IPD250N06N3G is a high-performance OptiMOS™ power MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power switching and high current handling. This N-channel MOSFET features advanced trench technology, resulting in low on-state resistance (Rds(on)) and optimized gate charge (Qg), leading to reduced power losses and enhanced overall system performance. Its robust design and high current capability make it suitable for demanding applications such as motor control, DC-DC converters, and power tools.

Applications:

  • Motor Control Applications
  • DC-DC Converters
  • Power Tools
  • Battery Management Systems (BMS)
  • Uninterruptible Power Supplies (UPS)

Features:

  • Low on-state resistance (Rds(on)) for minimal conduction losses
  • Optimized gate charge (Qg) for fast switching speeds
  • Avalanche rated for robust performance
  • 100% avalanche tested
  • Pb-free lead finish; RoHS compliant
  • High current capability

Benefits:

  • Increased energy efficiency in power conversion and motor control systems
  • Reduced heat dissipation, enabling smaller and more efficient designs
  • Improved system reliability due to robust avalanche performance
  • Higher power density due to optimized thermal performance
  • Environmentally friendly due to Pb-free and RoHS compliance
  • Ability to handle high current loads

Additional Details:

The IPD250N06N3G is an N-channel MOSFET with a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) rating of up to 250A (depending on the case temperature). It has a typical Rds(on) of 2.7 mΩ at Vgs=10V, which minimizes conduction losses. The device is packaged in a DPAK (TO-252) package, suitable for surface mount assembly. It is designed for high current applications with enhanced thermal management.

The MOSFET is avalanche rated, ensuring that it can withstand voltage spikes and transient events without damage. The low gate charge allows for fast switching speeds, minimizing switching losses and improving overall system efficiency. The high current capability of the device makes it suitable for demanding applications such as motor control and power tools.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4692 $58.7680
100+ $1.2058 $120.5800
150+ $1.1677 $175.1550
205+ $1.1307 $231.7935
265+ $1.0926 $289.5390
355+ $0.9794 $347.6870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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