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IPD30N06S2-15

Name: IPD30N06S2-15
Brand: Infineon Technologies
SKU: 158382
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	IPD30N06S2-15
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 30A TO252-3
Datasheet	IPD30N06S2-15 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 80μA
Max Gate Charge	110nC @ 10V
Max Input Capacitance	1485pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	136W (Tc)
Maximum Rds On at Id,Vgs	14.7 mOhm @ 30A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	068995-IPD30N06S2-15
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD30N06S2-15 CAD Model

Description

The IPD30N06S2-15 is a N-Channel MOSFET manufactured by Infineon Technologies.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 30A @ 25°C
Maximum Gate-Source Voltage: ±20V
Maximum Rds On @ Id,Vgs: 14.7 mOhm @ 30A, 10V
Package: PG-TO252-3
Power Dissipation: 136W (Tc)
Popularity: Medium popularity in the open market
Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
115+	$0.5221	$60.0415
270+	$0.4285	$115.6950
420+	$0.4146	$174.1320
580+	$0.4008	$232.4640
745+	$0.3881	$289.1345
1,000+	$0.3477	$347.7000

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,000 pieces

MOQ: 115 pcs

Order Increment : 1 pcs

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