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Same model may have multiple batches, images only for reference.
IPD40N03S4L08ATMA1
Same model may have multiple batches, images only for reference.

IPD40N03S4L08ATMA1

Part No IPD40N03S4L08ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO252-3
Datasheet
IPD40N03S4L08ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 13μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1520pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 8.3 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3-11
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045864-IPD40N03S4L08ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD40N03S4L08ATMA1 CAD Model

Description

The Infineon Technologies 424285 is a N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 40A at 25°C (Tc).

  • Maximum Power Dissipation: 42W (Tc)
  • Maximum Rds On @ Id,Vgs: 8.3 mOhm @ 40A, 10V
  • Package: PG-TO252-3-11 with dimensions of TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT) technology
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Suitable For: use in Discrete Semiconductor Products

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