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Same model may have multiple batches, images only for reference.
IPD50N03S2-07 Real Image
Same model may have multiple batches, images only for reference.

IPD50N03S2-07

Part No IPD50N03S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO252-3
Datasheet
IPD50N03S2-07 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 85μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068996-IPD50N03S2-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50N03S2-07 CAD Model

Description

The Infineon Technologies 068996-IPD50N03S2-07 is a high-quality MOSFET component designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Power Dissipation: 136W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 85μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Rds On: 7.3 mOhm @ 50A, 10V
  • Package: PG-TO252-3
  • Mounting: SMD (SMT)

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46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
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