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IPD50P04P4L11ATMA1

Part No IPD50P04P4L11ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 50A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 85μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3-313
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045867-IPD50P04P4L11ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50P04P4L11ATMA1 CAD Model

Description

The Infineon Technologies 1045867-IPD50P04P4L11ATMA1 is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 40V and a Continuous Drain Current of 50A (Tc).

  • Max Gate Charge: 59nC @ 10V
  • Max Input Capacitance: 3900pF @ 25V
  • Designed for: Discrete Semiconductor Products
  • Power Dissipation (Max): 58W (Tc)
  • Mounting: PG-TO252-3-313 package
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Status: active product
  • Popularity: medium popularity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9294 $51.1170
115+ $0.8706 $100.1190
180+ $0.8412 $151.4160
260+ $0.7824 $203.4240
335+ $0.7530 $252.2550
415+ $0.7236 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,130 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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