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IPD50R280CEAUMA1

Part No IPD50R280CEAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 18.1A TO252 / Trans MOSFET N-CH 500V 18.1A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 550V
Current - Continuous Drain (Id) @ 25°C 18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Vgs(th) (Maximum) @ Id 3.5V @ 350μA
Gate Charge (Qg) (Maximum) @ Vgs 32.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 773pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 119W (Tc)
Rds On (Maximum) @ Id, Vgs 280 mOhm @ 4.2A, 13V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TO-252
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776863-IPD50R280CEAUMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPD50R280CE
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPD50R280CEAUMA1 CAD Model

Description

The Infineon Technologies IPD50R280CEAUMA1 is a CoolMOS MOSFET, manufactured by Infineon Technologies.

  • Continuous Drain Current: 18.1A
  • Maximum Power Dissipation: 119W
  • Channel Type: N
  • Drain-Source Voltage: 550V
  • Gate Charge @ 10V: 32.6nC
  • Input Capacitance @ 100V: 773pF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: Surface-Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5926 $50.3710
210+ $0.4863 $102.1230
320+ $0.4711 $150.7520
440+ $0.4559 $200.5960
570+ $0.4407 $251.1990
760+ $0.3951 $300.2760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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