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Same model may have multiple batches, images only for reference.
IPD50R3K0CEBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD50R3K0CEBTMA1

Part No IPD50R3K0CEBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.7A PG-TO-252
Datasheet
IPD50R3K0CEBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Gate-Source Threshold Voltage 3.5V @ 30μA
Max Gate Charge 4.3nC @ 10V
Max Input Capacitance 84pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 18W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 400mA, 13V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138755-IPD50R3K0CEBTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD50R3K0CEBTMA1 CAD Model

Description

Infineon Technologies IPD50R3K0CEBTMA1 is a not-for-new-designs N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 1.7A (Tc).

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 1.7A (Tc)
  • Package: PG-TO252-3
  • Mounting: Surface mount
  • Maximum Rds On: 3 Ohm @ 400mA, 13V
  • Gate-Source Threshold Voltage: 3.5V @ 30μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 84pF @ 100V
  • Max Gate Charge: 4.3nC @ 10V
  • Power Dissipation: 18W (Tc)

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