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IPD50R500CEBTMA1

Name: IPD50R500CEBTMA1
Brand: Infineon Technologies
SKU: 461025
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPD50R500CEBTMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 7.6A PG-TO252
Datasheet	IPD50R500CEBTMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	500V
Continuous Drain Current at 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Gate-Source Threshold Voltage	3.5V @ 200μA
Max Gate Charge	18.7nC @ 10V
Max Input Capacitance	433pF @ 100V
Maximum Gate-Source Voltage	±20V
FET Feature	Super Junction
Power Dissipation (Max)	57W (Tc)
Maximum Rds On at Id,Vgs	500 mOhm @ 2.3A, 13V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1045871-IPD50R500CEBTMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD50R500CEBTMA1 CAD Model

Alternative Products

Description

The 437130 is a super junction MOSFET with an N-channel polarity, manufactured by Infineon Technologies.

Mounting: SMD (SMT)
Package: PG-TO252-3
Temperature Range: -55°C to 150°C (TJ)
Drain-Source Breakdown Voltage: 500V
Maximum Power Dissipation: 57W (Tc)
Continuous Drain Current: 7.6A (Tc) @ 25°C
Gate-Source Threshold Voltage: 3.5V @ 200μA
Maximum Gate-Source Voltage: ±20V
Status: Balanced supply and demand

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
10+	$6.1943	$61.9430
23+	$5.0820	$116.8860
36+	$4.9238	$177.2568
49+	$4.7644	$233.4556
63+	$4.6061	$290.1843
84+	$4.1291	$346.8444

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 23,000 pieces

MOQ: 10 pcs

Order Increment : 1 pcs

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IPD50R500CEBTMA1

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