The Infineon Technologies 001851-IPD60R2K0C6ATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 2.4A @ 25°C.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 2.4A @ 25°C
• Gate-Source Threshold Voltage: 3.5V @ 60μA
• Maximum Gate Charge: 6.7nC @ 10V
• Maximum Rds On: 2 Ohm @ 760mA and 10V
• Design Usage: Discrete semiconductor products
• Power Dissipation: 22.3W (Tc)
• Package: TO-252-3
• Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
• Temperature Range: -55°C to 150°C (TJ)
• Maximum Gate-Source Voltage: ±20V
• Drive Voltage: 10V
• Supply and Demand Status: Balanced