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Same model may have multiple batches, images only for reference.
IPD60R380E6BTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD60R380E6BTMA1

Part No IPD60R380E6BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET NCH 600V 10.6A TO252
Datasheet
IPD60R380E6BTMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 300μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 700pF @ 100V
Maximum Gate-Source Voltage ±20V
FET Feature Super Junction
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 155°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 130205-IPD60R380E6BTMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD60R380E6BTMA1 CAD Model

Description

The Infineon Technologies 130205-IPD60R380E6BTMA1 is a Super Junction MOSFET that belongs to the Discrete Semiconductor Products category.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 155°C
  • Maximum Power Dissipation: 83W (Tc)
  • Device Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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