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Same model may have multiple batches, images only for reference.
IPD65R1K4C6ATMA1
Same model may have multiple batches, images only for reference.

IPD65R1K4C6ATMA1

Part No IPD65R1K4C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.2A TO252-3
Datasheet
IPD65R1K4C6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3
Manufacturer Infineon Technologies
Series CoolMOS™ C6
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package PG-TO252-3
Family Name IPD65R1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 874775-IPD65R1K4C6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD65R1K4C6ATMA1 CAD Model

Description

The Infineon Technologies IPD65R1K4C6ATMA1 CoolMOS™ C6 MOSFET is a single N-channel FET with a maximum drain to source voltage of 650V and a continuous drain current of 3.2A @ Tc.

  • Manufacturer: Infineon Technologies
  • Maximum Drain to Source Voltage: 650V
  • Continuous Drain Current: 3.2A @ Tc
  • Maximum Power Dissipation: 28W @ Tc
  • Package: PG-TO252-3
  • Popularity: Medium
  • Supply and Demand: Limited

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305+ $0.5754 $175.4970
415+ $0.5569 $231.1135
540+ $0.5384 $290.7360
720+ $0.4826 $347.4720
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MOQ: 80 pcs
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