The IPD65R380C6 is a CoolMOS™ Power MOSFET from Infineon Technologies. This MOSFET is engineered for high-efficiency power conversion in a variety of applications. It leverages Infineon's advanced superjunction technology, offering low on-resistance (RDS(on)) and reduced switching losses, which enhances overall system performance and energy efficiency.

Applications

• Switched-Mode Power Supplies (SMPS): Commonly utilized in power supplies for servers, telecom equipment, and industrial applications.
• Power Factor Correction (PFC): Integrated into PFC stages to improve the power factor of electronic devices and reduce harmonic distortion.
• DC-DC Converters: Suitable for DC-DC conversion in various electronic systems, including those in automotive and renewable energy sectors.
• Lighting: Used in electronic ballasts and LED lighting applications to improve efficiency and reduce energy consumption.

Features

• CoolMOS™ C6 Superjunction Technology: Offers low on-resistance and gate charge.
• Low RDS(on): Minimizes conduction losses, thereby improving efficiency. Typical RDS(on) is 0.38 Ohms.
• High Commutation Ruggedness: Ensures reliable operation under demanding conditions.
• Low Gate Charge (Qg): Reduces switching losses and enhances performance.
• Integrated Gate Resistor: Simplifies design and reduces the number of external components needed.
• Pb-free plating; RoHS compliant: Environmentally friendly, adhering to regulatory requirements.

Benefits

• Increased System Efficiency: Reduces power consumption and heat generation.
• High Power Density: Enables smaller and more compact designs.
• Improved Reliability: Robust design ensures stable operation.
• Reduced System Cost: Fewer components are required due to integrated features.
• Simplified Thermal Management: Lower RDS(on) reduces heat dissipation, simplifying cooling requirements.

Additional Details

The IPD65R380C6 operates with a drain-source voltage (VDS) of up to 650V and can handle a continuous drain current (ID) of up to 10.4A (at 25°C). It is typically supplied in a PG-TO252 (DPAK) package, allowing for efficient heat dissipation. The device is designed to deliver superior performance in hard-switching topologies, contributing to lower EMI and enhanced system reliability. Its optimized gate charge characteristics ensure fast switching speeds and reduced switching losses across a wide range of operating conditions. The robust body diode further enhances its suitability for applications requiring hard commutation.