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Same model may have multiple batches, images only for reference.
IPD65R380E6BTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R380E6BTMA1

Part No IPD65R380E6BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.6A TO252
Datasheet
IPD65R380E6BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045886-IPD65R380E6BTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD65R380E6BTMA1 CAD Model

Description

The Infineon Technologies IPD65R380E6BTMA1 is a MOSFET technology component that is designed for use in electronic devices.

  • Polarity: N-channel
  • Power Dissipation: 83W (Tc)
  • Status: Not for New Designs
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 380 mOhm @ 3.2A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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