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Same model may have multiple batches, images only for reference.
IPD65R420CFDBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R420CFDBTMA1

Part No IPD65R420CFDBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8.7A TO252
Datasheet
IPD65R420CFDBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 340μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 870pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83.3W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 125657-IPD65R420CFDBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R420CFDBTMA1 CAD Model

Description

The Infineon Technologies IPD65R420CFDBTMA1 is an N-channel MOSFET that belongs to the Discrete Semiconductor Products family.

  • Power Dissipation: 83.3 W
  • Drain-Source Breakdown Voltage: 650 V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Quantity Unit Price Ext. Price
45+ $1.4230 $64.0350
100+ $1.1677 $116.7700
155+ $1.1307 $175.2585
215+ $1.0949 $235.4035
275+ $1.0580 $290.9500
370+ $0.9483 $350.8710
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Availability: 1,780 pieces
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