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IPD70P04P4L08ATMA2 Real Image1 IPD70P04P4L08ATMA2 Real Image2
Same model may have multiple batches, images only for reference.
IPD70P04P4L08ATMA2 Real Image1 IPD70P04P4L08ATMA2 Real Image2
IPD70P04P4L08ATMA2 Real Image1 IPD70P04P4L08ATMA2 Real Image2
Same model may have multiple batches, images only for reference.

IPD70P04P4L08ATMA2

Part No IPD70P04P4L08ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 70A TO252-3 / P-Channel 40 V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313
Datasheet
IPD70P04P4L08ATMA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS®-P2
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD70
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1382312-IPD70P04P4L08ATMA2
Ultra Librarian 3D Model Ultra Librarian IPD70P04P4L08ATMA2 CAD Model

Description

The IPD70P04P4L08ATMA2 is a P-Channel MOSFET from the OptiMOS™-P2 series.

  • Drain-to-Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A (Tc)
  • On-Resistance (Rds On): 7.8mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Gate Charge (Qg): 92nC @ 10V
  • Package: Surface Mount

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