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Same model may have multiple batches, images only for reference.
IPD70P04P4L08ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD70P04P4L08ATMA1

Part No IPD70P04P4L08ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH TO252-3
Datasheet
IPD70P04P4L08ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 120μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 5430pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3-313
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045893-IPD70P04P4L08ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD70P04P4L08ATMA1 CAD Model

Description

The IPD70P04P4L08ATMA1 is a P-channel MOSFET from Infineon Technologies.

  • Popularity: Medium
  • Supply and Demand: Balanced
  • Power Dissipation: 75W
  • Continuous Drain Current: 70A @ 25°C

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Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
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