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IPD78CN10NG

Part No IPD78CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 1
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 50 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 746248-IPD78CN10NG
Ultra Librarian 3D Model Ultra Librarian IPD78CN10NG CAD Model

Description

The IPD78CN10NG is a single N-channel MOSFET transistor from Infineon Technologies. It is part of the OptiMOS™ 2 series and is designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 13A
  • Maximum On-Resistance (Rds On) @ 13A & 10V: 78mOhm
  • Gate Charge (Qg) @ 10V: 11nC
  • Input Capacitance (Ciss) @ 50V: 716pF
  • Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4590 $50.4900
270+ $0.3767 $101.7090
415+ $0.3649 $151.4335
570+ $0.3531 $201.2670
735+ $0.3414 $250.9290
985+ $0.3060 $301.4100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,400 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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