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Same model may have multiple batches, images only for reference.
IPD90P03P4-04 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD90P03P4-04

Part No IPD90P03P4-04
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET P-CH 30V 90A TO252-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Standard Package 1
Category Discrete Semiconductor Products
Family FETs - Single
Series OptiMOS
Packaging Reel
FET Type MOSFET P-Channel Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Rds On (Max) @ Id Vgs 4.5 mOhm @ 90A 10V
Vgs(th) (Max) @ Id 4V @ 253µA
Gate Charge (Qg) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) @ Vds 10300pF @ 25V
Power - Max 137W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3 DPak (2 Leads + Tab) SC-63
Manufacturer Device Package PG-TO252-3
Catalog P-Channel Standard FETs
Win Source Part Number 069004-IPD90P03P4-04
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IPD90P03P4-04
Introduction Date July 30, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IPD90P03P4-04 CAD Model

Description

The Infineon Technologies IPD90P03P4-04 is a P-channel MOSFET with a drain-source voltage of 30V and continuous drain current of 90A @ 25°C.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current @ 25°C: 90A
  • Package: TO-252-3 DPak (2 Leads + Tab) SC-63
  • Maximum Power Dissipation: 137W
  • Gate-Source Threshold Voltage: 4V @ 253μA
  • Gate Charge: 130nC @ 10V
  • Applications: power management applications
  • Halogen-Free Compliant: Yes
  • Supply and Demand Status: sufficient
  • Estimated EOL Date: 2024

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