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Same model may have multiple batches, images only for reference.
IPG20N06S3L-35 Real Image
Same model may have multiple batches, images only for reference.

IPG20N06S3L-35

Part No IPG20N06S3L-35
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 55V 20A TDSON-8
Datasheet
IPG20N06S3L-35 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A
Maximum Rds On at Id,Vgs 35 mOhm @ 11A, 10V
Gate-Source Threshold Voltage 2.2V @ 15μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1730pF @ 25V
Maximum Power Dissipation 30W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8-4
Win Source Part Number 1045907-IPG20N06S3L-35
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPG20N06S3L-35 CAD Model

Description

Its supply and demand status is balanced. This component is manufactured by Infineon Technologies and has a Win Source Part Number of 1045907-IPG20N06S3L-35.

  • Type: Dual N-channel FET with a logic level gate feature
  • Case/Package: PG-TDSON-8-4
  • Maximum Power Dissipation: 30W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 20A
  • Gate-Source Threshold Voltage: 2.2V @ 15μA
  • Maximum Gate Charge: 23nC @ 10V
  • Max Input Capacitance: 1730pF @ 25V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 11A, 10V

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