The IPI076N12N3G is a power MOSFET from Infineon Technologies' OptiMOS™ family. This N-channel MOSFET is designed for high-efficiency power switching applications.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• Motor control applications
• Power tools

Features

• Low on-resistance (Rds(on)) for reduced conduction losses
• Logic level driving, enabling direct control from microcontrollers
• Avalanche rated, providing robustness against voltage spikes
• Superior thermal resistance for efficient heat dissipation
• Pb-free lead finish; RoHS compliant

Benefits

• Improved energy efficiency in power conversion systems
• Simplified driving circuitry
• Enhanced reliability in demanding applications
• Reduced system size and cost due to efficient thermal management

Additional Details

The IPI076N12N3G features a drain-source voltage (Vds) of 120V and a continuous drain current (Id) of 60A. It is available in a PG-TO262-3 package. The typical Rds(on) is 7.6 mOhm at Vgs=10V. This MOSFET's low gate charge allows for fast switching speeds and minimizes switching losses. It's optimized for high-frequency switching applications. The device's optimized design leads to low switching losses. The thermal resistance junction to case is low which makes it suitable for high power application with good heat sinking.