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IPI084N06L3GXKSA1

Part No IPI084N06L3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO262-3  /  N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 30 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI084N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001065242,2156-IPI084N06L3GXKSA1,IFEINFIPI084N06L3GXKSA1
Standard Package 500
Win Source Part Number 1023288-IPI084N06L3GXKSA1
Ultra Librarian 3D Model Ultra Librarian IPI084N06L3GXKSA1 CAD Model

Description

The IPI084N06L3GXKSA1 from Infineon Technologies is a N-Channel MOSFET transistor with a drain-source voltage of 60V.

  • Drain-Source Voltage: 60V
  • Continuous Drain Current (25°C): 50A
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Power Dissipation: 79W
  • Temperature Range: -55°C to 175°C
  • Status: Obsolete
  • Supply and Demand: Limited

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