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Same model may have multiple batches, images only for reference.
IPI200N25N3 G Real Image
Same model may have multiple batches, images only for reference.

IPI200N25N3 G

Part No IPI200N25N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 64A TO262-3
Datasheet
IPI200N25N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7100pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 20 mOhm @ 64A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776879-IPI200N25N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI200N25N3 G CAD Model

Description

The Infineon Technologies IPI200N25N3 G is an OptiMOS N-channel MOSFET electronic component manufactured by Infineon Technologies.

  • Packaging: Tube
  • Maximum Power Dissipation (Tc): 300W
  • Drain-Source Voltage: 250V
  • Continuous Drain Current (Tc): 64A
  • Gate-Source Threshold Voltage: 4V @ 270μA
  • Maximum Gate Charge @ 10V: 86nC
  • Maximum Input Capacitance @ 100V: 7100pF
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 64A, 10V
  • Case/Package: PG-TO262-3
  • Channel Type: N
  • Ideal For: Discrete Semiconductor Products

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