The Infineon Technologies IPI50R199CPXKSA1 MOSFET is a through-hole mounting N-channel polarity electronic component with a power dissipation of 139W (Tc).

• Power Dissipation: 139W (Tc)
• Polarity: N-channel
• Maximum Gate-Source Voltage: ±20V
• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current @ 25°C: 17A (Tc)
• Maximum Rds On @ Id,Vgs: 199 mOhm @ 9.9A, 10V
• Maximum Gate Charge: 45nC @ 10V
• Maximum Input Capacitance: 1800pF @ 100V
• Package: PG-TO262-3
• Popularity: popular
• Status: active
• Operating Temperature Range: -55°C to 150°C (TJ)