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Same model may have multiple batches, images only for reference.
IPI50R250CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI50R250CP

Part No IPI50R250CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A TO262-3
Datasheet
IPI50R250CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 520μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1420pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069016-IPI50R250CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI50R250CP CAD Model

Description

The Infineon Technologies 069016-IPI50R250CP is an N-channel MOSFET that comes in a PG-TO262-3 package.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 13A
  • Gate-Source Threshold Voltage: 3.5V @ 520μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Rds On @ Id,Vgs: 250 mOhm @ 7.8A, 10V
  • Discrete Semiconductor Product Use: Designed for use in discrete semiconductor products
  • Maximum Power Dissipation: 114W (Tc)
  • Supply and Demand Status: Balanced

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