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Same model may have multiple batches, images only for reference.
IPI50R399CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI50R399CP

Part No IPI50R399CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 9A TO-262
Datasheet
IPI50R399CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 330μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 890pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 399 mOhm @ 4.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069017-IPI50R399CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI50R399CP CAD Model

Description

The Infineon Technologies 069017-IPI50R399CP is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Mounting Type: Through Hole
  • Package: PG-TO262-3
  • Power Dissipation: 83W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 9A
  • Gate-Source Threshold Voltage: 3.5V @ 330μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 890pF @ 100V
  • Maximum Rds On @ Id,Vgs: 399 mOhm @ 4.9A, 10V
  • Supply and Demand Status: Limited

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