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Same model may have multiple batches, images only for reference.
IPI60R280C6 Real Image
Same model may have multiple batches, images only for reference.

IPI60R280C6

Part No IPI60R280C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13.8A TO262-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ C6
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 202 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 603572-IPI60R280C6
Ultra Librarian 3D Model Ultra Librarian IPI60R280C6 CAD Model

Description

The IPI60R280C6 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from the CoolMOS™ C6 series.

  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 13.8A
  • Rds On (maximum on-resistance): 280mOhm @ 6.5A and 10V
  • Gate Charge: 43nC @ 10V
  • Mounting Type: through-hole
  • Package: TO-262-3
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Infineon Technologies
  • Status: active

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