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Same model may have multiple batches, images only for reference.
IPL60R385CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPL60R385CP

Part No IPL60R385CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A 4VSON
Datasheet
IPL60R385CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 340μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 790pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 385 mOhm @ 5.2A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-VSON-4
Dimension 4-PowerTSFN
Win Source Part Number 1045944-IPL60R385CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPL60R385CP CAD Model

Description

The Infineon Technologies IPL60R385CP is an N-channel MOSFET that is designed for use in a variety of electronic devices.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 83W
  • Continuous Drain Current: 9A @ 25°C
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On: 385 mOhm @ 5.2A, 10V
  • Operating Temperature: -40°C to 150°C
  • Package: PG-VSON-4

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Quantity Unit Price Ext. Price
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38+ $3.0870 $117.3060
58+ $2.9905 $173.4490
80+ $2.8941 $231.5280
104+ $2.7976 $290.9504
139+ $2.5082 $348.6398
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