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IPN60R1K0PFD7SATMA1

Part No IPN60R1K0PFD7SATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description CONSUMER PG-SOT223-3 / N-Channel 600 V 4.7A (Tc) 6W (Tc) Surface Mount PG-SOT223-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ PFD7
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Product Number IPN60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354176-IPN60R1K0PFD7SATMA1
Ultra Librarian 3D Model Ultra Librarian IPN60R1K0PFD7SATMA1 CAD Model

Description

The IPN60R1K0PFD7SATMA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • FET Type: N-Channel
  • FET Feature: Standard
  • Series: CoolMOS PFD7
  • Voltage - Drain to Source (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) @ Vgs: 6nC @ 10V
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3591 $116.7075
500+ $0.3479 $173.9500
690+ $0.3367 $232.3230
890+ $0.3255 $289.6950
1,190+ $0.2918 $347.2420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,230 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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