The IPN95R2K0P7ATMA1 is a CoolMOS™ P7 series power MOSFET from Infineon Technologies. This device is designed for high-efficiency applications with enhanced performance and ease of use. It utilizes superjunction technology, providing ultra-low on-state resistance and optimized switching behavior, making it suitable for a variety of power electronics applications.

Applications:

• Switched-Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• DC-DC Converters
• LED Lighting
• Solar Inverters

Features:

• CoolMOS™ P7 Technology: Offers improved efficiency and thermal behavior.
• Ultra-low on-state resistance (RDS(on)): Reduces conduction losses.
• Optimized switching performance: Minimizes switching losses.
• Integrated fast body diode: Enhances robustness and reliability.
• Pb-free lead plating; RoHS compliant: Meets environmental standards.

Benefits:

• High efficiency: Low RDS(on) and optimized switching reduce power losses.
• Simplified design: Integrated features streamline circuit implementation.
• Increased reliability: Robust body diode enhances device ruggedness.
• Compact solution: Allows for smaller and more efficient power supply designs.
• Environmentally friendly: RoHS compliance ensures adherence to environmental regulations.

Technical Specifications:

The IPN95R2K0P7ATMA1 features a drain-source voltage (VDS) of 950V, and a typical on-state resistance (RDS(on)) of 2.0 Ω at VGS = 10V. It is designed to handle a specific continuous drain current (ID), which depends on the operating conditions and thermal management. The device is available in a PG-TO252 package, which allows for efficient heat dissipation. The integrated fast body diode ensures robust performance in hard-switching topologies.

This CoolMOS™ P7 MOSFET is an excellent choice for applications that demand high efficiency, reliability, and ease of use. Its advanced technology and robust design make it suitable for a wide range of power electronics systems.