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Same model may have multiple batches, images only for reference.
IPP015N04NGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP015N04NGXKSA1

Part No IPP015N04NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO220-3
Datasheet
IPP015N04NGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 20000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 140387-IPP015N04NGXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP015N04NGXKSA1 CAD Model

Description

The Infineon Technologies IPP015N04NGXKSA1 is a MOSFET Discrete Semiconductor Product that can be used for various applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 200μA
  • Maximum Rds On @ Id,Vgs: 1.5 mOhm @ 100A, 10V
  • Product Status: Active
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.5374 $64.6122
6+ $17.6717 $106.0302
9+ $17.1195 $154.0755
13+ $16.5672 $215.3736
16+ $16.0150 $256.2400
21+ $14.3583 $301.5243
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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